Gated-diode Sense Amplifier for Robust Differential sensing in 6T SRAM
نویسندگان
چکیده
The reliable operation of SRAM in presence of process variation in sub-100nm devices is largely influenced by periphery circuits, like sense amplifiers, demanding more robust solutions. A new differential sense amplifier for use in standard 6-T SRAM based on gated-diode is proposed and designed. For comparison, three other latch-based sense amplifiers are also designed in 45nm technology. The brief description of each sense amplifier is presented with HSPICE simulation results. With sense amplifier model and reasonable assumption, the deep analysis of effects from process variation proves that gated-diode sense amplifier is the most robust. Index terms – Clamped bit-line sense amplifier (CBLSA), Conventional sense amplifier (CSA), Gateddiode sense amplifier (GDSA), Transconductance sense amplifier or Matsui sense amplifier (TSA),
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